Gyeonggi-do, South Korea

Gwan Goo Jung

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Nesscap Co., Ltd.. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gwan Goo Jung. Retrieved from https://idiyas.com/inventor/gwan-goo-jung

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2020

Loading Chart...
Loading Chart...
1 patent (USPTO):Explore Patents

Title: Gwan Goo Jung: Innovator in Electric Double Layer Devices

Introduction

Gwan Goo Jung is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of electric double layer devices, showcasing his innovative spirit and technical expertise.

Latest Patents

Gwan Goo Jung holds a patent for an electric double layer device. This device is designed such that a lower terminal is directly withdrawn from a lower collecting plate, similar to how an upper terminal is withdrawn from an upper collecting plate. This configuration enhances productivity and ease of assembly while also increasing connection force. He has 1 patent to his name.

Career Highlights

Throughout his career, Gwan Goo Jung has worked with prominent companies in the industry. He has been associated with Nesscap Co., Ltd. and Maxwell Technologies Korea Co., Ltd. His work in these organizations has contributed to advancements in energy storage technologies.

Collaborations

Some of his coworkers include Young Jin Kim, who has collaborated with him on various projects. Their teamwork has played a role in the development of innovative solutions in their field.

Conclusion

Gwan Goo Jung's contributions to electric double layer devices highlight his role as an inventor dedicated to improving technology. His innovative designs and collaborations continue to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…