Guowei Zhao

Title: Guowei Zhao: Innovator in Semiconductor Light Sources

Introduction

Guowei Zhao is a notable inventor based in Apopka, Florida. He has made significant contributions to the field of semiconductor technology, particularly in the development of light sources. His innovative work has led to the creation of a patented technology that enhances the efficiency and functionality of light sources.

Latest Patents

Guowei Zhao holds a patent for "Diffused channel semiconductor light sources." This invention features a semiconductor vertical resonant cavity light source that includes an upper mirror and a lower mirror, defining a vertical resonant cavity. Within this cavity, a first active region is designated for light generation. The design incorporates an inner mode confinement region and an outer current blocking region. A depleted heterojunction current blocking region (DHCBR) is strategically placed within the outer current blocking region of at least one of the mirrors or the active region. This configuration ensures that current flows into a conducting channel during the operation of the light source, optimizing its performance.

Career Highlights

Throughout his career, Guowei Zhao has worked with esteemed organizations, including the University of Central Florida Research Foundation, Inc. and Sdphotonics LLC. His experience in these institutions has allowed him to collaborate with other experts in the field and further his research in semiconductor technologies.

Collaborations

One of his notable collaborators is Dennis G Deppe, with whom he has worked on various projects related to semiconductor light sources.

Conclusion

Guowei Zhao's contributions to semiconductor technology, particularly through his patented innovations, have made a significant impact in the field. His work continues to influence advancements in light source technology, showcasing the importance of innovation in this area.