The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
May. 20, 2015
University of Central Florida Research Foundation, Inc., Orlando, FL (US);
Dennis G. Deppe, Oviedo, FL (US);
Guowei Zhao, Apopka, FL (US);
University of Central Florida Research Foundation, Inc., Orlando, FL (US);
sdPhotonics, LLC, Oviedo, FL (US);
Abstract
A semiconductor vertical resonant cavity light source includes an upper mirror and a lower mirror that define a vertical resonant cavity. A first active region is within the vertical resonant cavity for light generation between the upper mirror and lower mirror. The vertical resonant cavity includes an inner mode confinement region and an outer current blocking region. A depleted heterojunction current blocking region (DHCBR) is within the outer current blocking region of at least one of the upper mirror, lower mirror, and first active region. A conducting channel within the inner mode confinement region is framed by the DHCBR. The DHCBR forces current flow into the conducting channel during operation of the light source. A cavity length within the inner mode confinement region equals or exceeds the cavity length formed in the DHCBR.