This inventor holds 2 USPTO granted patents. Top assignees: Hangzhou Silan Integrated Circuit Co., Ltd., Hangzhou Silan Microelectronics Co., Ltd.. Active years: 2017-2020.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
2 out of 7 
2 out of 20 Years Active: 2017-2020
Title: Guoqiang Yu: Innovator in High-Voltage Device Technology
Introduction
Guoqiang Yu is a notable inventor based in Hangzhou, China. He has made significant contributions to the field of high-voltage devices, particularly through his innovative patents. With a total of two patents to his name, Yu's work focuses on enhancing the reliability and efficiency of high-voltage devices in semiconductor technology.
Latest Patents
One of Guoqiang Yu's latest patents is titled "Isolation structure and manufacturing method thereof for high-voltage device in a high-voltage BCD process." This invention provides an isolation structure that includes a semiconductor substrate with a first type of doping and an epitaxial layer with a second type of doping. The isolation region extends through the epitaxial layer into the semiconductor substrate, effectively isolating the epitaxial island where the BCD high-voltage device is located. This innovation increases the breakdown voltage of the high-voltage device, ensuring that the parasitical threshold voltage between the aluminum wiring and the silicon surface exceeds 1200V. This advancement improves the planarization of oxide layer steps on the silicon surface throughout the high-voltage BCD process, thereby enhancing product reliability.
Career Highlights
Guoqiang Yu has worked with prominent companies in the semiconductor industry, including Hangzhou Silan Integrated Circuit Co., Ltd. and Hangzhou Silan Microelectronics Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in high-voltage device technology.
Collaborations
Some of Guoqiang Yu's notable coworkers include Yongxiang Wen and Shaohua Zhang. Their collaboration has likely contributed to the advancements in the projects they have worked on together.
Conclusion
Guoqiang Yu's contributions to high-voltage device technology through his patents demonstrate his commitment to innovation in the semiconductor field. His work not only enhances device reliability but also pushes the boundaries of what is possible in high-voltage applications.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile