Guofang Yang

Title: Guofang Yang: Innovator in Field Effect Transistor Technology

Introduction

Guofang Yang is a prominent inventor based in Xi'an, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced field effect transistors. His innovative work addresses critical challenges in the industry, showcasing his expertise and dedication to research.

Latest Patents

Guofang Yang holds a patent for a "Bidirectional blocking monolithic heterogeneous integrated cascode-structure field effect transistor, and manufacturing method thereof." This invention primarily solves the issue of the existing monolithic heterogeneous integrated cascode-structure field effect transistors lacking reverse blocking characteristics. The design includes a substrate, a GaN buffer layer, an AlGaN barrier layer, and a SiN isolation layer. An isolation groove is etched in the middle of the SiN isolation layer, allowing for the preparation of a Si metal oxide semiconductor field effect transistor on one side and a GaN high-electron-mobility transistor on the other side. This innovative structure enables the formation of a bidirectional blocking monolithic heterogeneous integrated cascode-structure field effect transistor.

Career Highlights

Guofang Yang is affiliated with Xidian University, where he continues to advance his research in semiconductor technologies. His work has garnered attention for its potential applications in various electronic devices, enhancing their performance and efficiency.

Collaborations

He collaborates with notable colleagues, including Chunfu Zhang and Weihang Zhang, contributing to a dynamic research environment that fosters innovation and development in their field.

Conclusion

Guofang Yang's contributions to the field of field effect transistors exemplify his commitment to innovation and excellence in semiconductor technology. His patent addresses significant challenges and paves the way for future advancements in the industry.