Suwon-si, South Korea

Gukrok Yun

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gukrok Yun. Retrieved from https://idiyas.com/inventor/gukrok-yun-nz23ntvv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Gukrok Yun: Innovator in Plasma Processing Technology

Introduction

Gukrok Yun is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of plasma processing technology. His innovative work has led to the development of a unique plasma process apparatus.

Latest Patents

Gukrok Yun holds 1 patent for his invention titled "Plasma process apparatus." This apparatus includes a chamber with a plasma processing space, a substrate stage, and a gas supplier. The design features a plasma generator that generates plasma from the supplied gas. Additionally, it incorporates a target with deposition particles and a coil assembly that generates magnetic field vectors to guide the plasma effectively.

Career Highlights

Gukrok Yun is currently employed at Samsung Electronics Ltd., where he continues to advance his research and development efforts in plasma technology. His work has been instrumental in enhancing the efficiency and effectiveness of plasma processing applications.

Collaborations

Gukrok Yun collaborates with talented coworkers, including Jaesuk Kim and Sangwook Park. Their combined expertise contributes to the innovative projects at Samsung Electronics Ltd.

Conclusion

Gukrok Yun's contributions to plasma processing technology exemplify the spirit of innovation. His patent and ongoing work at Samsung Electronics Ltd. highlight his role as a key figure in advancing this important field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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