Paris, France

Guillaume Gouget

This inventor holds 1 USPTO granted patent. Top assignees: Centre National De La Recherche Scientifique, College De France. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Guillaume Gouget. Retrieved from https://idiyas.com/inventor/guillaume-gouget

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: The Innovations of Guillaume Gouget

Introduction

Guillaume Gouget is a notable inventor based in Paris, France. He is recognized for his contributions to the field of materials science, particularly in the development of nanostructured materials. His innovative work has led to the creation of a unique boron material that has potential applications in various industries.

Latest Patents

Guillaume Gouget holds a patent for a nanostructured amorphous boron material. This material consists essentially of boron and is characterized by its amorphous form, comprising aggregates of boron nanoparticles. The patent also details a method of preparation for this material and outlines its various uses.

Career Highlights

Throughout his career, Gouget has worked with prestigious institutions such as the Centre National de la Recherche Scientifique and the Collège de France. His work at these organizations has allowed him to collaborate with leading experts in the field and contribute to significant advancements in materials research.

Collaborations

Some of his notable coworkers include Clément Sanchez and Christel Gervais Stary. Their collaborative efforts have further enhanced the research and development of innovative materials.

Conclusion

Guillaume Gouget's work in nanostructured materials exemplifies the impact of innovative thinking in science and technology. His contributions continue to influence the field and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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