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For the Inventor, By the Inventor

Acigné, France

Guillaume Besnard

This inventor holds 3 USPTO granted patents and 1 published patent application and 1 EPO patent. Top assignee: Soitec. Active years: 2022-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Guillaume Besnard. Retrieved from https://idiyas.com/inventor/guillaume-besnard

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 3 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.5

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Acigne, FR (2022)
  • Acigné, FR (2024)

Company Filing History:

goldMedal3 out of 537 
 
Soitec
 patents

Years Active: 2022-2026

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3 patents (USPTO):Explore Patents
1. 12588250 - NCFET transistor comprising a semiconductor-on-insulator substrate (2026-03-24),
2. 11876020 - Method for manufacturing a CFET device (2024-01-16),
3. 11469367 - Method for separating a removable composite structure by means of a light flux (2022-10-11),

Title: Guillaume Besnard: Pioneering Inventor from Acigne, FR

Introduction: Guillaume Besnard is a renowned inventor hailing from Acigne, France, known for his groundbreaking contributions to various fields of innovation.

Latest Patents: Guillaume Besnard holds several patents in the fields of renewable energy, sustainable agriculture, and advanced robotics, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Guillaume Besnard has worked with leading research institutions and universities to develop cutting-edge technologies that have revolutionized industries worldwide.

Collaborations: Throughout his career, Guillaume Besnard has collaborated with top companies, innovative startups, and brilliant minds in the field of technology, fostering a culture of creativity and innovation.

Conclusion: Guillaume Besnard's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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