Guei-Chi Guo

Title: Innovations by Guei-Chi Guo

Introduction

Guei-Chi Guo is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of innovative processes for DRAM capacitor structures. His work has led to advancements that enhance the efficiency and performance of memory devices.

Latest Patents

Guei-Chi Guo holds a patent for an "Etch stop layer used for the fabrication of an overlying crown shaped." This patent describes a process for creating a crown-shaped storage node structure for a DRAM capacitor. The innovation features the use of a silicon oxynitride layer, which is strategically placed to protect underlying DRAM elements. The process involves a selective RIE procedure that creates a capacitor opening in an insulator layer, terminating at the silicon oxynitride layer. This method improves the fabrication of capacitor structures, enhancing their reliability and performance.

Career Highlights

Guei-Chi Guo is currently employed at Vanguard International Semiconductor Corporation, where he continues to work on cutting-edge semiconductor technologies. His expertise in the field has made him a valuable asset to the company and the industry as a whole.

Collaborations

Throughout his career, Guei-Chi Guo has collaborated with esteemed colleagues such as Yue-Feng Chen and Liang-Gi Yao. These collaborations have fostered a productive environment for innovation and have contributed to the advancement of semiconductor technologies.

Conclusion

Guei-Chi Guo's contributions to the field of semiconductor technology, particularly through his innovative patent, demonstrate his commitment to advancing memory device efficiency. His work continues to influence the industry positively.