Suzhou, China

Guanshen Yang

This inventor holds 6 USPTO granted patents. Top assignee: Innoscience (Suzhou) Technology Co., Ltd.. Active years: 2024-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Guanshen Yang. Retrieved from https://idiyas.com/inventor/guanshen-yang-6g5r5o9j

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2024-2025

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6 patents (USPTO):Explore Patents

Title: Guanshen Yang: Innovator in Nitride-Based Semiconductor Technology

Introduction

Guanshen Yang is a prominent inventor based in Suzhou, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of nitride-based devices. With a total of six patents to his name, Yang is recognized for his innovative approaches to enhancing semiconductor performance.

Latest Patents

One of Yang's latest patents is titled "Nitride-based semiconductor bidirectional switching device and method for manufacturing the same." This invention provides a nitride-based bidirectional switching device equipped with substrate potential management capability. The device features a control node, a first power/load node, a second power/load node, and a main substrate. It includes a nitride-based bilateral transistor and a substrate potential management circuit designed to manage the potential of the main substrate. By implementing this circuit, the substrate potential can be stabilized to a lower value of the potentials from the first and second source/drain of the bilateral transistor, regardless of the operational direction of the bidirectional switching device. This innovation allows the bilateral transistor to operate with a stable substrate potential, facilitating current conduction in both directions.

Career Highlights

Guanshen Yang is currently employed at Innoscience (Suzhou) Technology Co., Ltd. His work at this company has positioned him as a key player in the semiconductor industry, where he continues to push the boundaries of technology.

Collaborations

Yang collaborates with notable colleagues, including Qiyue Zhao and Chunhua Zhou. Their combined expertise contributes to the advancement of innovative semiconductor solutions.

Conclusion

Guanshen Yang's contributions to nitride-based semiconductor technology exemplify his commitment to innovation. His patents reflect a deep understanding of semiconductor dynamics and a drive to improve device performance. Through his work, Yang continues to influence the future of semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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