Guangyu Huang

Title: Innovations by Guangyu Huang in Semiconductor Technology

Introduction

Guangyu Huang is a notable inventor based in Singapore, recognized for his contributions to semiconductor technology. He holds two patents that showcase his expertise in adjusting the gate threshold of field effect transistors (FETs). His work is instrumental in enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of Guangyu Huang's latest patents is a method to tune the narrow width effect with raised source/drain (S/D) structures. This innovative method involves fabricating a semiconductor device that adjusts the gate threshold (Vt) of a FET with raised S/D regions. A halo region is formed through a two-step process, which includes implanting dopants using conventional techniques and at a specific twist angle. The dopant concentration in the halo region near the active edge of the raised S/D regions is higher and extends deeper than that within the interior region. Consequently, the Vt near the active edge region is adjusted differently from the Vt at the active center regions, achieving the same or similar Vt for a FET with varying widths.

Career Highlights

Guangyu Huang is currently employed at Globalfoundries Singapore Pte. Ltd., where he applies his innovative techniques to advance semiconductor technology. His work has significantly impacted the field, making him a valuable asset to his company and the industry.

Collaborations

Some of his coworkers include Chunshan Yin and Elgin Kiok Quek, who collaborate with him on various projects within the semiconductor domain.

Conclusion

Guangyu Huang's contributions to semiconductor technology through his innovative patents demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of efficient semiconductor devices.