Guangming Li

Title: Innovations of Guangming Li in Semiconductor Technology

Introduction

Guangming Li is a notable inventor based in Irvine, CA, who has made significant contributions to the field of semiconductor technology. With a focus on enhancing the performance of capacitors, his work has implications for various electronic applications.

Latest Patents

Guangming Li holds a patent titled "Method for fabricating a MIM capacitor having increased capacitance density and related structure." This patent describes a method for fabricating a Metal-Insulator-Metal (MIM) capacitor within a semiconductor die. The process involves depositing a first interconnect metal layer, followed by a layer of silicon nitride, which is deposited using an ammonia-to-silane ratio of at least 12.5. The method continues with the deposition of a layer of MIM capacitor metal, which is then etched to form the upper electrode of the capacitor. Additionally, the silicon nitride layer is etched to create a dielectric segment, and the first interconnect metal layer is etched to form the lower electrode. The resulting MIM capacitor achieves a capacitance density of at least 2.0 fF/um.

Career Highlights

Guangming Li is currently employed at Newport Fab, LLC, where he continues to innovate in the semiconductor industry. His expertise in capacitor technology has positioned him as a valuable asset to his company and the broader field.

Collaborations

Throughout his career, Guangming Li has collaborated with esteemed colleagues such as Dieter Dornisch and Kenneth M Ring. These partnerships have fostered an environment of innovation and have contributed to the advancement of semiconductor technologies.

Conclusion

Guangming Li's contributions to the field of semiconductor technology, particularly through his patented methods for MIM capacitors, highlight his role as an influential inventor. His work not only enhances the performance of electronic devices but also showcases the importance of innovation in the tech industry.