Guangle Zhou

Title: Guangle Zhou: Innovator in Low Voltage Tunnel Field-Effect Transistors

Introduction

Guangle Zhou is a notable inventor based in South Bend, IN (US). He has made significant contributions to the field of semiconductor technology, particularly with his innovative work on low voltage tunnel field-effect transistors (TFETs). His research and inventions have the potential to impact various electronic applications.

Latest Patents

Guangle Zhou holds a patent for a low voltage tunnel field-effect transistor and the method of making it. This invention includes a p-n tunnel junction, a gate-dielectric, a gate, a source-contact, and a drain-contact. The p-n tunnel junction features a depletion region that interfaces a source-layer and a drain-layer. The internal electric field of the depletion region is oriented towards the source-tunneling-region and the drain-tunneling-region, enhancing the transistor's efficiency.

Career Highlights

Throughout his career, Guangle Zhou has worked with prestigious organizations, including the University of Notre Dame Du Lac and IBM. His experience in these institutions has allowed him to collaborate with leading experts in the field and contribute to groundbreaking research.

Collaborations

Guangle Zhou has collaborated with notable colleagues such as Alan C. Seabaugh and Patrick Fay. Their combined expertise has fostered advancements in semiconductor technology and innovation.

Conclusion

Guangle Zhou's contributions to the field of low voltage tunnel field-effect transistors exemplify his dedication to innovation and research. His work continues to influence the development of efficient electronic devices.