Freiberg, Germany

Grit Hüttl

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Gfe Fremat Gmbh. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Grit Hüttl. Retrieved from https://idiyas.com/inventor/grit-hüttl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Grit Hüttl: Innovator in Target Arrangement Technology

Introduction

Grit Hüttl is a notable inventor based in Freiberg, Germany. She has made significant contributions to the field of target arrangement technology. Her innovative approach has led to the development of a unique patent that enhances the functionality of target arrangements.

Latest Patents

Grit Hüttl holds a patent for a target arrangement that comprises a tubular-shaped carrier element and a hollow-cylindrical target. This target includes at least one target material and features a one-piece tube segment that partially surrounds the carrier element. The design allows for a material fit between the carrier element and the tube segment through at least two plastically deformable compensating means. This invention also encompasses a method for producing such a target arrangement and a tubular segment.

Career Highlights

Grit Hüttl is associated with GFE Fremat GmbH, where she applies her expertise in developing innovative solutions. Her work has been instrumental in advancing the technology related to target arrangements.

Collaborations

Grit collaborates with talented individuals such as Folke Steinert and Joachim Wagner, contributing to a dynamic work environment that fosters innovation.

Conclusion

Grit Hüttl's contributions to target arrangement technology exemplify her commitment to innovation and excellence in her field. Her patent reflects her ingenuity and dedication to advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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