Company Filing History:
Years Active: 2019
Title: Gregory U'Ren: Innovator in Transistor Technology
Introduction
Gregory U'Ren is a notable inventor based in Chevreuse, France. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for forming advanced transistors.
Latest Patents
U'Ren holds a patent for a "Method for the formation of transistors PDSO1 and FDSO1 on a same substrate." This invention relates to a method for forming an electronic device that accommodates at least one fully depleted transistor of the FDSOI type and at least one partially depleted transistor of the PDSOI type. The method involves a stack of layers that includes at least one insulating layer topped with at least one active layer made of semiconductor material. It comprises at least one step of dry etching and one step of height adjustment between at least two etched elements. U'Ren's innovative approach enhances the efficiency and performance of electronic devices.
Career Highlights
Throughout his career, U'Ren has worked with prominent companies in the semiconductor industry, including X-Fab Semiconductor Foundries AG and X-Fab France. His experience in these organizations has allowed him to refine his skills and contribute to cutting-edge technology in the field.
Collaborations
U'Ren has collaborated with notable professionals in the industry, including Pascal Costaganna and Francis Domart. These collaborations have further enriched his work and expanded the impact of his inventions.
Conclusion
Gregory U'Ren is a distinguished inventor whose work in transistor technology has paved the way for advancements in electronic devices. His patent and career achievements reflect his dedication to innovation in the semiconductor industry.