Gregory N Parsons

Title: Gregory N Parsons: Innovator in Silicon Deposition Technology

Introduction

Gregory N Parsons is a notable inventor based in Tarrytown, NY (US). He has made significant contributions to the field of chemical vapor deposition, particularly in the area of silicon deposition technology. His innovative work has implications for the manufacturing of electronic devices.

Latest Patents

Parsons holds a patent for "Pulsed gas plasma-enhanced chemical vapor deposition of silicon." This patent describes a method where a substrate with silicon receptive surface areas is maintained in a plasma enhanced chemical vapor deposition (PECVD) chamber. The process involves forming a gas plasma, typically made up of hydrogen, under specific conditions to deposit a thin layer of silicon on the substrate. The method allows for selective deposition of silicon on predetermined receptive areas, which simplifies the manufacturing process of electronic devices, such as amorphous silicon thin film transistors.

Career Highlights

Gregory N Parsons is associated with the International Business Machines Corporation (IBM), where he has contributed to advancements in semiconductor technology. His work has been instrumental in improving the efficiency and effectiveness of silicon film production for electronic applications.

Collaborations

Parsons has collaborated with notable colleagues, including John Batey and John J Boland. These collaborations have further enhanced the research and development efforts in the field of chemical vapor deposition.

Conclusion

Gregory N Parsons is a distinguished inventor whose work in pulsed gas plasma-enhanced chemical vapor deposition has paved the way for advancements in electronic device manufacturing. His contributions continue to influence the industry and drive innovation forward.