Gregory Lopinski

Title: Gregory Lopinski: Innovator in Thin Film Transistor Technology

Introduction

Gregory Lopinski is a notable inventor based in Ottawa, Canada. He has made significant contributions to the field of thin film transistors (TFTs), particularly through his innovative patent that enhances the performance of these devices. His work is recognized for its potential applications in various electronic technologies.

Latest Patents

Lopinski holds a patent for a CNT thin film transistor with a high K polymeric dielectric. This invention features a gate electrode, a gate insulation layer, and a semiconducting channel that is separated from the gate electrode by the gate insulation layer. The gate insulation layer is composed of a cross-linked cyanoethylated polyhydroxy polymer, which has a high dielectric constant. The semiconducting channel is made up of a network of semiconducting carbon nanotubes, which are adhered to the gate insulation layer through a polymeric material. This design allows TFTs to achieve high mobilities while maintaining good on/off ratios, making them highly efficient for electronic applications.

Career Highlights

Gregory Lopinski is affiliated with the National Research Council of Canada, where he continues to advance research in the field of electronics. His work has garnered attention for its innovative approach to improving the functionality of thin film transistors.

Collaborations

Lopinski has collaborated with notable colleagues such as Naiying Du and Patrick Malenfant. Their combined expertise contributes to the ongoing research and development in the field of thin film technology.

Conclusion

Gregory Lopinski's contributions to the field of thin film transistors exemplify the innovative spirit of modern inventors. His patent for a CNT thin film transistor with a high K polymeric dielectric showcases his commitment to advancing electronic technology.