Gregory C Johnston

Title: Gregory C Johnston: Innovator in Semiconductor Technology

Introduction

Gregory C Johnston is a notable inventor based in Albuquerque, NM (US). He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on improving the properties of porous dielectric materials, which are essential for the advancement of microelectronic devices.

Latest Patents

One of Johnston's latest patents involves a porous dielectric material with improved pore surface properties. This invention provides an enhanced porous structure for semiconductor devices and outlines a process for its creation. The method includes providing a substrate that comprises a microelectronic circuit and a porous silica layer, with an average pore diameter ranging from 2 to 80 nm. The substrate is then heated to temperatures between 100 and 490 degrees Celsius in a substantially halogen-free atmosphere. This innovative approach aims to improve the dielectric properties of the porous dielectric material, making it more effective for use in semiconductor applications.

Career Highlights

Gregory C Johnston is currently associated with Texas Instruments Corporation, where he continues to develop cutting-edge technologies in the semiconductor industry. His expertise and innovative mindset have positioned him as a key player in his field.

Collaborations

Throughout his career, Johnston has collaborated with esteemed colleagues, including Bruce E Gnade and Douglas M Smith. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in technology.

Conclusion

Gregory C Johnston's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to pave the way for advancements in microelectronics, showcasing the importance of innovation in this rapidly evolving field.