Graeme K Barker

Title: Graeme K Barker: Innovator in High-Frequency Diode Technology

Introduction:

Graeme K Barker is an esteemed inventor and engineer based in Essex, Great Britain, with a passion for pushing the boundaries of high-frequency semiconductor diode technology. His groundbreaking work in the field has led to the development of the Interdigitated Schottky diode, a crucial component for various applications, including millimeter wave technology. As we delve into his contributions and collaborations, we uncover the remarkable career of this accomplished inventor.

Latest Patents:

Graeme K Barker has one patent to his name, which showcases his expertise in high-frequency diode technology. The patent titled "Interdigitated Schottky Diode" demonstrates a diode structure that includes a buried layer of n.sup.+ -type material and a surface layer of lightly doped n-type material. This unique structure enables a Schottky barrier contact to be established and ensures low series resistance, making it ideal for high-frequency operation. Moreover, this innovative diode structure is compatible with MESFET processing techniques and can be efficiently integrated into integrated circuits.

Career Highlights:

Graeme K Barker is a valued member of the ITT Gallium Arsenide Technology Center, a division of ITT Corporation, where he has made significant contributions to the advancement of diode technology. His expertise in high-frequency diodes and the integration of such components into integrated circuits has been instrumental in driving innovation and progress within the field.

Collaborations:

Throughout his career, Graeme K Barker has had the privilege of collaborating with other talented professionals in his field. Notably, he has shared projects and ideas with colleagues such as Joseph Mun and Mohamed H Badawi. These collaborations have fostered an environment of knowledge exchange and innovation, ultimately leading to groundbreaking advancements within the domain of high-frequency diodes.

Conclusion:

Graeme K Barker's inventive spirit and expertise in high-frequency diode technology have undoubtedly contributed to the development and progression of the field. His patent for the Interdigitated Schottky diode stands as a testament to his ingenuity and technical prowess. As an integral member of the ITT Gallium Arsenide Technology Center, Graeme K Barker continues to push the boundaries of high-frequency semiconductor technology, driving innovation and shaping the future of integrated circuits.

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