The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 1988
Filed:
Dec. 22, 1986
Applicant:
Inventors:
Assignee:
ITT Gallium Arsenide Technology Center, a Division of ITT Corporation, Roanoke, VA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 15 ; 357 22 ; 357 68 ;
Abstract
A high frequency, e.g. millimeter wave, semiconductor diode structure includes a buried layer of n.sup.+ -type material and a surface layer of lightly doped n-type material on which a Schottky barrier contact is disposed. The n.sup.+ -type layer provides a low series resistance thus permitting high frequency operation. The structure is compatible with MESFET processing techniques and may thus be incorporated in an integrated circuit.