Goto Hideki

Title: Goto Hideki: Innovator in Semiconductor Laser Diodes

Introduction

Goto Hideki is a prominent inventor based in Ushiku, Japan. He is known for his significant contributions to the field of semiconductor technology. His innovative work has led to the development of a patented semiconductor laser diode, which showcases his expertise and creativity in this specialized area.

Latest Patents

Goto Hideki holds a patent for a semiconductor laser diode. The patent describes a semiconductor laser diode that comprises at least a first clad layer, an active layer, and a second clad layer disposed in this order on the substrate. Additionally, it includes a buried layer for current blocking located at both sides in the cavity direction of the active layer. Notably, at least one of the first clad layer and second clad layer contains at least one superlattice in the direction parallel with the substrate. The average refractive index (nc1) of the first clad layer, the refractive index (na) of the active layer, and the average refractive index (nc2) of the second clad layer satisfy specific equations, highlighting the technical sophistication of his invention.

Career Highlights

Goto Hideki is associated with Mitsubishi Chemical Corporation, where he has been able to apply his innovative ideas in a corporate setting. His work at the company has allowed him to contribute to advancements in semiconductor technology, further establishing his reputation as a skilled inventor.

Collaborations

Goto Hideki has collaborated with notable colleagues, including Hideyoshi Horie and Yuichi Inoue. These collaborations have likely enriched his work and contributed to the development of innovative technologies in the semiconductor field.

Conclusion

Goto Hideki's contributions to semiconductor laser diodes exemplify his innovative spirit and technical expertise. His patent reflects a significant advancement in the field, showcasing the potential for future developments in semiconductor technology.