Mitsubishi Chemical Corporation

Goto Hideki

Kenji Shimoyama

Hideyoshi Horie

Nobuyuki Hosoi

Yuichi Inoue

The disclosure described a semiconductor laser diode comprising at least a first clad layer, an active layer and a second clad layer disposed in this order on the substrate, and a buried layer for current blocking disposed at both sides in the cavity direction of the active layer, at least one of the first clad layer and second clad layer having at least one superlattice in the direction parallel with the substrate, and the average refractive index (nc1) of the first clad layer, the refractive index (na) of the active layer and the average refractive index (nc2) of the second clad layer satisfying the following equations.

Growing community of inventors

Ushiku, Japan

Goto Hideki