This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 1997.
Company Filing History:
Years Active: 1997
Title: The Innovations of Gordon E Pike
Introduction
Gordon E Pike is a notable inventor based in Albuquerque, NM (US). He has made significant contributions to the field of ferroelectric capacitors, showcasing his expertise through his innovative patent.
Latest Patents
Gordon E Pike holds a patent for a "Ferroelectric capacitor with reduced imprint." This invention presents an improved ferroelectric capacitor that exhibits reduced imprint effects compared to prior art capacitors. The design includes top and bottom electrodes with a ferroelectric layer sandwiched in between. The ferroelectric layer comprises a perovskite structure of the chemical composition ABO.sub.3, where the B-site consists of first and second elements along with a dopant element that has an oxidation state greater than +4. The concentration of the dopant is sufficient to minimize shifts in the coercive voltage of the capacitor over time. In the preferred embodiment, the ferroelectric element includes Pb in the A-site, while the first and second elements are Zr and Ti, respectively. The preferred dopant is selected from Niobium, Tantalum, and Tungsten, occupying between 1 and 8% of the B-sites.
Career Highlights
Throughout his career, Gordon E Pike has demonstrated a commitment to advancing technology in the field of capacitors. His innovative approach has led to the development of a patent that addresses critical issues in ferroelectric materials.
Collaborations
Gordon has collaborated with notable colleagues, including William L Warren and Joseph T Evans, Jr. These partnerships have contributed to the successful development of his patented technology.
Conclusion
Gordon E Pike's contributions to the field of ferroelectric capacitors highlight his innovative spirit and dedication to technological advancement. His patent for a ferroelectric capacitor with reduced imprint effects represents a significant step forward in capacitor technology.