Company Filing History:
Years Active: 1997-1998
Title: Gopal Raghavan: Innovator in MOS Transistor Technology
Introduction
Gopal Raghavan is a prominent inventor based in Mountain View, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of MOS transistors. With a total of 2 patents to his name, Raghavan's work has had a notable impact on the industry.
Latest Patents
Raghavan's latest patents include a method of fabricating a MOS transistor with a composite gate electrode. This innovative design offers a reliable and high-performance solution that is compatible with standard CMOS fabrication processes. The composite gate electrode consists of a polysilicon layer formed on a highly conductive layer, which is placed on a gate insulating layer over a silicon substrate. Additionally, a pair of source/drain regions are self-aligned to the edges of the composite gate electrode, enhancing the transistor's efficiency.
Career Highlights
Gopal Raghavan is currently employed at Intel Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the performance and reliability of MOS transistors, making them more efficient for various applications.
Collaborations
Raghavan has collaborated with notable colleagues, including Robert S Chau and David B Fraser. These partnerships have fostered innovation and contributed to the successful development of cutting-edge technologies in the semiconductor field.
Conclusion
Gopal Raghavan's contributions to MOS transistor technology exemplify his dedication to innovation in the semiconductor industry. His patents and collaborations reflect a commitment to advancing technology for future applications.