Company Filing History:
Years Active: 2012-2025
Title: Innovations of Gongheum Han in Memory Device Technology
Introduction
Gongheum Han is a notable inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of memory device technology, holding a total of 3 patents. His work focuses on enhancing the performance and reliability of memory devices through innovative circuit designs.
Latest Patents
One of his latest patents is titled "Word line driver circuits for memory devices and methods of operating same." This invention includes a memory device that features a word line driver circuit designed to reduce gate stress on transistors. It achieves this by utilizing a lower high voltage that varies according to commands. The memory device comprises multiple memory blocks and provides either a high voltage or a lower high voltage to a variable high voltage line in response to a block select signal. The invention allows for the adjustment of the lower high voltage to different levels—low, medium, or high—based on the command. This innovative approach applies the lower high voltage to the gates of P-type metal oxide semiconductor (PMOS) transistors, which are connected to a word line driving signal, effectively driving the word lines of non-selected memory blocks.
Career Highlights
Gongheum Han is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of advancements in memory device technology. His contributions have been instrumental in developing more efficient and reliable memory solutions.
Collaborations
Throughout his career, Gongheum Han has collaborated with talented individuals such as Sunggeun Do and Youngsik Kim. These collaborations have fostered a creative environment that has led to innovative solutions in the field of memory devices.
Conclusion
Gongheum Han's work in memory device technology exemplifies the impact of innovative thinking in the electronics industry. His patents reflect a commitment to improving the functionality and efficiency of memory devices, making significant strides in this essential area of technology.