This inventor holds 1 USPTO granted patent. Top assignee: Harris Corporation. Active years: 1984.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1984
Title: Glenn M Friedman: Innovator in Amorphous Semiconductor Technology
Introduction
Glenn M Friedman is a notable inventor based in San Diego, California. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to amorphous devices.
Latest Patents
Friedman holds a patent for "Amorphous devices and interconnect system and method of fabrication." This invention involves an amorphous semiconductor device on a silicon substrate, featuring a first level contact and interconnect of aluminum, along with a coextensive layer of molybdenum. The device also includes a second level contact and interconnect of molybdenum and a coextensive layer of aluminum. The fabrication method encompasses several steps, including the formation of aluminum and molybdenum layers, coetching to create contacts and interconnects, and the application of insulating materials.
Career Highlights
Friedman is associated with Harris Corporation, where he has contributed to advancements in semiconductor technology. His work has been instrumental in developing innovative solutions that enhance the performance and efficiency of electronic devices.
Collaborations
One of his notable collaborators is William R Morcom, with whom he has worked on various projects related to semiconductor technology.
Conclusion
Glenn M Friedman is a distinguished inventor whose work in amorphous semiconductor devices has paved the way for advancements in the field. His contributions continue to influence the development of innovative technologies in electronics.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
