Glen A Stack

Title: Glen A Stack: Innovator in Aluminum Nitride Crystal Growth

Introduction

Glen A Stack is a notable inventor based in Scotia, NY (US). He has made significant contributions to the field of materials science, particularly in the growth of aluminum nitride crystals. With one patent to his name, Stack's work has implications for various applications in electronics and optoelectronics.

Latest Patents

Glen A Stack holds a patent titled "Defect reduction in seeded aluminum nitride crystal growth." This patent describes a bulk single crystal of aluminum nitride (AlN) with an areal planar defect density of less than or equal to 100 cm. The methods outlined in the patent involve melting aluminum foil to uniformly wet a foundation with a layer of aluminum. This foundation serves as part of an AlN seed holder, which is essential for the growth of AlN crystals. The holder is designed to consist of a substantially impervious backing plate, enhancing the efficiency of the growth process.

Career Highlights

Throughout his career, Glen A Stack has been associated with Crystal IS, Inc., a company known for its advancements in semiconductor materials. His work has contributed to the development of high-quality aluminum nitride crystals, which are crucial for various technological applications.

Collaborations

Glen A Stack has collaborated with notable colleagues, including Robert T Bondokov and Kenneth E Morgan. These partnerships have fostered innovation and have been instrumental in advancing research in the field of crystal growth.

Conclusion

Glen A Stack's contributions to aluminum nitride crystal growth exemplify the importance of innovation in materials science. His patent and collaborative efforts highlight the potential for advancements in technology through dedicated research and development.