SALON DE PROVENCE, France

Giovanni Massasso

This inventor holds 1 USPTO granted patent and 2 published patent applications and 2 EPO patents. Top assignee: Saint-Gobain Centre De Recherches Et D'etudes Europeen. Active years: 2026.

USPTO Granted Patents = 1 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Giovanni Massasso: Innovator in Silicon Carbide Materials

Introduction

Giovanni Massasso is an inventor based in Salon-de-Provence, France. He is currently associated with Saint-Gobain Centre de Recherches et d'Études Européen. Although he has not yet been granted any patents, his work focuses on advanced materials, particularly in the field of silicon carbide.

Latest Patent Applications

Giovanni Massasso has submitted several notable patent applications. One of his latest applications is for a method for producing high-purity, dense sintered silicon carbide material. This polycrystalline silicon carbide sintered material includes silicon carbide grains with a median equivalent diameter of between 1 and 10 microns. The material boasts a total porosity of less than 2% by volume and a silicon carbide mass content of at least 99%, excluding free carbon. Additionally, the mass ratio of the beta-type crystallographic form to the alpha-type form of SiC in the material is less than 2.

Another significant application is for a dense sintered material of silicon carbide with very low electrical resistivity. This polycrystalline sintered ceramic material contains more than 95% silicon carbide by mass, with minimal amounts of other elements. The grains of this material have a median equivalent diameter of between 0.5 and 5 micrometers, and the total porosity is less than 15% by volume.

Conclusion

Giovanni Massasso is making strides in the field of silicon carbide materials through his innovative patent applications. His work has the potential to contribute significantly to advancements in material science.

Profile summary based on public USPTO records.
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