This inventor holds 1 USPTO granted patent. Top assignee: Centre National De La Recherche Scientifique. Active years: 1994.
Company Filing History:
Years Active: 1994
Title: Gilles Horowitz: Innovator in Thin-Layer Field-Effect Transistors
Introduction
Gilles Horowitz is a notable inventor based in Villebon sur Yvette, France. He has made significant contributions to the field of electronics, particularly in the development of thin-layer field-effect transistors.
Latest Patents
Horowitz holds a patent for thin-layer field-effect transistors with a Metal-Insulator-Semiconductor (MIS) structure. This innovative design focuses on enhancing the performance and efficiency of electronic devices.
Career Highlights
Gilles Horowitz is affiliated with the Centre National de la Recherche Scientifique, a prestigious research institution in France. His work has been instrumental in advancing the understanding and application of semiconductor technology.
Collaborations
Throughout his career, Horowitz has collaborated with esteemed colleagues such as Francis Garnier and Denis Fichou. These partnerships have fostered a rich environment for innovation and research.
Conclusion
Gilles Horowitz's contributions to the field of thin-layer field-effect transistors exemplify his dedication to advancing technology. His work continues to influence the electronics industry and inspire future innovations.