Kfar Yona, Israel

Gilad Ben-Bassat

This inventor holds 1 USPTO granted patent. Top assignee: Hewlett-Packard Industrial Printing Ltd.. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gilad Ben-Bassat. Retrieved from https://idiyas.com/inventor/gilad-ben-bassat

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Gilad Ben-Bassat: Innovator in Ink-Jet Printing Technology

Introduction

Gilad Ben-Bassat is a notable inventor based in Kfar Yona, Israel. He has made significant contributions to the field of ink-jet printing technology. His innovative approach has led to the development of a unique patent that enhances the printing process.

Latest Patents

Gilad Ben-Bassat holds a patent for a system titled "Printed ink curing." This ink-jet printing system includes a generator for in situ generation of a component of an inert atmosphere, which is depleted of oxygen. The system features a curing zone where the generated component, such as nitrogen or carbon dioxide, is distributable over the ink deposited on a substrate. The ink is then exposed to a curing agent, such as UV radiation, to ensure optimal curing.

Career Highlights

Ben-Bassat is currently associated with Hewlett-Packard Industrial Printing Ltd., where he continues to innovate and develop advanced printing solutions. His work has been instrumental in improving the efficiency and quality of ink-jet printing technologies.

Collaborations

He has collaborated with notable colleagues, including Ran Vilk and Yokai Edlitz, who share his passion for advancing printing technology.

Conclusion

Gilad Ben-Bassat's contributions to ink-jet printing technology exemplify his innovative spirit and dedication to enhancing printing processes. His patent for printed ink curing is a testament to his expertise and commitment to the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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