Suwon, South Korea

Gi Ho Seo


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 12(Granted Patents)


Company Filing History:


Years Active: 1999-2000

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2 patents (USPTO):Explore Patents

Title: Gi Ho Seo - Innovator in Semiconductor Technology

Introduction

Gi Ho Seo is a prominent inventor based in Suwon, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His innovative work focuses on preventing cracks in insulating spaces within semiconductor devices, which is crucial for enhancing their performance and reliability.

Latest Patents

Gi Ho Seo's latest patents include a method for preventing cracks in insulating spaces between metal wiring in semiconductor devices. The first patent describes a semiconductor device that features a metal layer pattern designed to prevent cracks from forming in insulating spaces. This device consists of multiple metal layers stacked vertically, with insulating layers interposed between them. Each metal layer has a metal wiring pattern, and the insulating spaces are vertically shifted in relation to the neighboring layers. The second patent also addresses the same issue, emphasizing the importance of the vertical arrangement of insulating spaces to avoid cracks.

Career Highlights

Gi Ho Seo is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to push the boundaries of semiconductor technology, contributing to advancements that benefit the industry as a whole.

Collaborations

Throughout his career, Gi Ho Seo has collaborated with notable colleagues, including Han Seong Kim and Young Soo Jeon. These partnerships have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Gi Ho Seo's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a key innovator in the field. His efforts to prevent cracks in insulating spaces are vital for the advancement of reliable semiconductor devices.

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