Chungju-si, South Korea

Geun Woo Park

This inventor holds 1 USPTO granted patent. Top assignee: Yg-1 Co., Ltd. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Geun Woo Park. Retrieved from https://idiyas.com/inventor/geun-woo-park-7jodnppi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Geun Woo Park and Advances in Coated Cutting Tools

Introduction

Geun Woo Park is an inventor based in Chungju-si, South Korea, and works at YG-1 Co., Ltd. His patent work focuses on improving the wear resistance and chipping resistance of coated cutting tools.

Latest Patents

Park is associated with 1 patent: “Coated Cutting Tool and Method for Making Coating Layer.” The invention describes a coating formed on all or part of a cutting-tool substrate. It includes columnar-grain MT-TiCN and α-Al₂O₃ layers, with specified crystallographic texture coefficients. The MT-TiCN layer is deposited by chemical vapor deposition at temperatures between 800°C and 950°C, while the α-Al₂O₃ layer has a strong <001> crystallographic orientation. The disclosed approach aims to provide excellent adhesion and improve wear and chipping resistance without using the HT-TiCN layer found in some related techniques.

Career Highlights

Park’s patent reflects work on coating composition, deposition conditions, and crystallographic orientation to enhance cutting-tool performance. The invention’s focus is on producing a durable coating through a defined combination of material layers and manufacturing methods.

Collaborations

Park’s listed coworkers include Dong Seob Kim and Hye Min Ahn. His work is associated with YG-1 Co., Ltd.

Conclusion

Geun Woo Park’s patent presents a coating-layer approach designed to improve the durability and performance of cutting tools through carefully controlled materials and deposition methods.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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