Geun Hyeong Park

Title: Geun Hyeong Park: Innovator in Semiconductor Technology

Introduction

Geun Hyeong Park is a notable inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.

Latest Patents

Geun Hyeong Park holds 1 patent for a semiconductor device. This device comprises a substrate, a capacitor contact structure electrically connected to the substrate, a bottom electrode connected to the capacitor contact structure, a capacitor dielectric layer on the bottom electrode, and a top electrode on the capacitor dielectric layer. The top electrode includes an interface layer on the capacitor dielectric layer and an electrode layer on the interface layer. The interface layer consists of a first layer made of molybdenum and oxygen, and a second layer made of molybdenum and nitrogen. The electrode layer is composed of titanium and nitrogen. Notably, the thickness of the interface layer is less than that of the capacitor dielectric layer and the electrode layer.

Career Highlights

Throughout his career, Geun Hyeong Park has worked with prominent organizations such as Samsung Electronics Ltd. and Pusan National University. His experience in these institutions has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Geun Hyeong Park has collaborated with Min Hyuk Park, further enhancing his research and development efforts in the semiconductor field.

Conclusion

Geun Hyeong Park is a distinguished inventor whose work in semiconductor technology has made a lasting impact. His innovative patent showcases his expertise and commitment to advancing the industry.