Antony, France

Gervaise Vilain

This inventor holds 1 USPTO granted patent. Top assignee: Thomson-Csf. Active years: 1991.


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 1991

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1 patent (USPTO):Explore Patents

Title: Gervaise Vilain: Innovator in Semiconductor Technology

Introduction

Gervaise Vilain is a notable inventor based in Antony, France. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods for creating diffraction lattices.

Latest Patents

Gervaise Vilain holds a patent for a "Method for making a diffraction lattice on a semiconductor material." This method involves several precise steps, including the deposition of various layers of semiconducting materials through epitaxy. The process ensures the creation of a diffraction lattice with specific thickness requirements, enhancing the functionality of semiconductor devices.

Career Highlights

Gervaise Vilain is associated with Thomson-CSF, a prominent company in the technology sector. His work has been instrumental in advancing semiconductor applications, showcasing his expertise and dedication to innovation.

Collaborations

Throughout his career, Gervaise has collaborated with talented individuals such as Anne Taineau and Daniel Rondi. These partnerships have contributed to the successful development of his patented technologies.

Conclusion

Gervaise Vilain's contributions to semiconductor technology through his innovative methods and collaborations highlight his role as a key inventor in the field. His work continues to influence advancements in technology and semiconductor applications.

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