Munich, Germany

Gert Pfahl


Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2022

where 'Filed Patents' based on already Granted Patents

1 patent (USPTO):

Title: Gert Pfahl: Innovator in Semiconductor Technology

Introduction

Gert Pfahl is a notable inventor based in Munich, Germany. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Gert Pfahl holds a patent for a semiconductor substrate that features a bond pad material based on aluminum. This semiconductor substrate includes a bond pad that consists of a layer of an aluminum alloy. The chemical composition of this alloy includes at least 0.3% by weight of at least one of the elements Zn, Mg, Sc, Zr, Ti, Ag, and/or Mn, with the remainder being primarily aluminum and incidental impurities.

Career Highlights

Gert Pfahl is associated with Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has allowed him to focus on advancing semiconductor materials and technologies.

Collaborations

Gert has collaborated with talented coworkers such as Daniel Bolowski and Marian Sebastian Broll, contributing to various projects within the company.

Conclusion

Gert Pfahl's innovative work in semiconductor technology, particularly his patent on aluminum-based bond pads, showcases his expertise and commitment to advancing the field. His contributions continue to influence the semiconductor industry.

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