Gerhard H Olsen

Title: Gerhard H Olsen: Innovator in Thin-Film Technology

Introduction

Gerhard H Olsen is a notable inventor based in Ithaca, NY (US). He has made significant contributions to the field of thin-film technology, particularly through his innovative patent. His work has implications in various industries, showcasing the importance of advancements in material science.

Latest Patents

Olsen holds a patent for a "Thin-film structure and method of manufacturing the same." This patent describes a thin-film structure that includes a support layer and a dielectric layer. The support layer is composed of a material with a specific lattice constant, while the dielectric layer features a compound with a Ruddlesden-Popper phase (ABX). In this context, A and B represent cations, X denotes an anion, and n is a natural number. Notably, the lattice constant of the support layer's material may be less than that of the compound, highlighting the innovative nature of his work. He has 1 patent to his name.

Career Highlights

Throughout his career, Gerhard H Olsen has worked with prominent organizations, including Samsung Electronics Co., Ltd. and Cornell University. His experience in these institutions has allowed him to develop and refine his expertise in thin-film technologies, contributing to his reputation as a leading inventor in this field.

Collaborations

Olsen has collaborated with notable colleagues such as Kiyoung Lee and Woojin Lee. These partnerships have further enhanced his research and development efforts, leading to advancements in thin-film structures.

Conclusion

Gerhard H Olsen's contributions to thin-film technology through his patent and collaborations underscore his role as an influential inventor. His work continues to impact the field, paving the way for future innovations in material science.