The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2021
Filed:
Nov. 27, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Cornell University, Ithaca, NY (US);
Kiyoung Lee, Seoul, KR;
Woojin Lee, Suwon-si, KR;
Myoungho Jeong, Seongnam-si, KR;
Yongsung Kim, Suwon-si, KR;
Eunsun Kim, Suwon-si, KR;
Hyosik Mun, Hwaseong-si, KR;
Jooho Lee, Hwaseong-si, KR;
Changseung Lee, Yongin-si, KR;
Kyuho Cho, Seoul, KR;
Darrell G. Schlom, Ithaca, NY (US);
Craig J. Fennie, Ithaca, NY (US);
Natalie M. Dawley, Ithaca, NY (US);
Gerhard H. Olsen, Ithaca, NY (US);
Zhe Wang, Ithaca, NY (US);
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Cornell University, Ithaca, NY (US);
Abstract
A thin-film structure includes a support layer and a dielectric layer on the support layer. The support layer includes a material having a lattice constant. The dielectric layer includes a compound having a Ruddlesden-Popper phase (ABX). where A and B each independently include a cation, X is an anion, and n is a natural number. The lattice constant of the material of the support layer may be less than a lattice constant of the compound.