Gerard Sarrabayrouse

Title: Gerard Sarrabayrouse: Innovator in Semiconductor Memory Technology

Introduction

Gerard Sarrabayrouse is a notable inventor based in Toulouse, France. He has made significant contributions to the field of semiconductor technology, particularly in the development of non-volatile memory devices. His innovative work has led to the granting of a patent that showcases his expertise and creativity in this area.

Latest Patents

Gerard Sarrabayrouse holds a patent for a non-volatile amorphous semiconductor memory device. This device utilizes a forming process and comprises superimposed layers of p- and n-doped semiconducting material, such as silicon. The invention is characterized by the fact that both the p- and n-doped layers are made of amorphous semiconducting material, with one layer being significantly more heavily doped than the other. The less heavily doped layer has a thickness not exceeding 2 micrometers, while the dopant concentration in the more heavily doped layer is at least one hundred times greater than that of the less heavily doped layer. Additionally, a quasi-intrinsic layer or substantially undoped amorphous semiconducting material may be applied to one of the doped layers, enhancing the device's functionality as an electrically-programmable non-volatile semiconductor memory device. He has 1 patent to his name.

Career Highlights

Gerard Sarrabayrouse is currently associated with the British Petroleum Company, Plc. His work at this esteemed organization has allowed him to further his research and development in semiconductor technologies. His contributions have been instrumental in advancing the capabilities of memory devices used in various applications.

Collaborations

Throughout his career, Gerard has collaborated with notable colleagues, including Alan E Owen and Peter G Lecomber. These partnerships have fostered innovation and have played a crucial role in the development of his patented technologies.

Conclusion

Gerard Sarrabayrouse is a distinguished inventor whose work in semiconductor memory technology has made a lasting impact. His patent for a non-volatile amorphous semiconductor memory device exemplifies his innovative spirit and technical expertise. His contributions continue to influence the field and pave the way for future advancements.