Palaiseau, France

Gerard Doriath


Average Co-Inventor Count = 3.0

ph-index = 5

Forward Citations = 88(Granted Patents)


Location History:

  • Paris, FR (1977 - 1985)
  • Palaiseau, FR (1987 - 1989)
  • Verrieres le Buisson, FR (1990)

Company Filing History:


Years Active: 1977-1990

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7 patents (USPTO):Explore Patents

Title: The Innovations of Gerard Doriath

Introduction

Gerard Doriath is a prominent inventor based in Palaiseau, France. He has made significant contributions to the field of optoelectronics, holding a total of seven patents. His work focuses on developing advanced devices that integrate seamlessly with silicon substrates.

Latest Patents

One of Doriath's latest patents is for a Group III-V compound-based optoelectronic device on a silicon substrate. This innovative device features a set of matching layers, including a first confinement layer made of indium phosphide, an active layer based on Ga.sub.x In.sub.1-x As.sub.1-y, and a second active layer of indium phosphide. Another notable patent is for an integrated head designed for measuring magnetic fields. This device incorporates a light source, a light guide that is insensitive to magnetic fields, and a layer of magnetic material that causes the rotation of the plane of polarization of light when exposed to a magnetic field.

Career Highlights

Doriath has built a successful career at Thomson-CSF, where he has been instrumental in advancing optoelectronic technologies. His expertise in integrating various materials and components has led to groundbreaking innovations in the field.

Collaborations

Throughout his career, Doriath has collaborated with notable colleagues, including Roger Gaudry and Manijeh Razeghi. These partnerships have fostered a creative environment that has resulted in significant advancements in optoelectronic devices.

Conclusion

Gerard Doriath's contributions to the field of optoelectronics are noteworthy, with several patents that showcase his innovative spirit and technical expertise. His work continues to influence the development of advanced technologies in this area.

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