Company Filing History:
Years Active: 1980
Title: Gerard Beuchet: Innovator in Epitaxial Layer Production
Introduction
Gerard Beuchet is a notable inventor based in Paris, France. He has made significant contributions to the field of materials science, particularly in the production of epitaxial layers. His innovative work has led to advancements in the manufacturing of monocrystalline indium phosphide, which is essential for various electronic applications.
Latest Patents
Gerard Beuchet holds a patent for a gas-phase process for the production of an epitaxial layer of indium. This process involves two key steps. In the first step, phosphine is decomposed in a pyrolysis chamber, which extends through a kiln. In the second step, phosphorus is reacted with triethylindium in an atmosphere of hydrogen and nitrogen. The residual gases from this process are efficiently drawn off by a vacuum pump. He has 1 patent to his name.
Career Highlights
Beuchet has worked with Thomson-CSF, a prominent company in the field of electronics and telecommunications. His role at the company has allowed him to apply his expertise in epitaxy and contribute to the development of advanced materials.
Collaborations
Throughout his career, Gerard Beuchet has collaborated with esteemed colleagues, including Jean-Pascal Duchemin and Daniel Leguen. These partnerships have fostered innovation and have been instrumental in advancing their shared research goals.
Conclusion
Gerard Beuchet's contributions to the field of epitaxial layer production highlight his role as a key innovator in materials science. His patented process for producing thin and homogeneous layers of monocrystalline indium phosphide showcases his expertise and commitment to advancing technology.