The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 1980
Filed:
Mar. 06, 1979
Applicant:
Inventors:
Jean-Pascal Duchemin, Paris, FR;
Daniel Leguen, Paris, FR;
Michel Bonnet, Paris, FR;
Francois Koelsch, Paris, FR;
Gerard Beuchet, Paris, FR;
Assignee:
Thomson-CSF, Paris, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148175 ; 118719 ; 148-15 ; 148174 ; 156610 ; 156613 ; 156614 ; 252 / ; 357 61 ; 427 87 ;
Abstract
A process and an apparatus for epitaxy in a gaseous phase, producing thin and homogeneous layers of monocrystalline indium phosphide. The process comprises two steps. In the first step, the phosphine is decomposed in a pyrolysis chamber which extends through a kiln in accordance with the reaction: ##EQU1## Thereafter, in a second step, the phosphorus is reacted with triethylindium in an atmosphere of hydrogen and nitrogen: ##EQU2## The residual gases are drawn off by a vacuum pump.