Gerald M Williams

Title: Gerald M Williams: Innovator in Infrared Technology

Introduction

Gerald M Williams is a notable inventor based in Malvern, GB. He has made significant contributions to the field of infrared technology, particularly through his innovative work on photo diodes. His expertise and inventions have had a lasting impact on the industry.

Latest Patents

Gerald M Williams holds a patent for an infrared sensitive photo diode. This invention involves a photo diode formed by a substrate of Cd.sub.x Hg.sub.1-x Te covered with a layer of CdTe, creating a p-n junction. The substrate may be p-type, with the layer being n-type, or vice versa. An array of photo diodes can be formed by covering the substrate with semi-insulating CdTe and forming islets of In on the CdTe. Heating causes In to diffuse into the CdTe, doping it n-type. This results in regions of n-type CdTe surrounded by semi-insulating CdTe, with each region forming a photo diode in conjunction with the substrate. The heating also facilitates diffusion between the Cd.sub.x Hg.sub.1-x Te and CdTe, resulting in a graded heterostructure. Electrical connections are made to the substrate and each n-type region.

Career Highlights

Gerald M Williams is currently employed by the Secretary of State for Defence in Her Britannic Majesty's Government. His work in this capacity has allowed him to apply his innovative ideas in practical applications that benefit national defense.

Collaborations

Throughout his career, Gerald has collaborated with notable colleagues, including Robin F Farrow and Anthony B Dean. These collaborations have contributed to the advancement of technology in their respective fields.

Conclusion

Gerald M Williams is a distinguished inventor whose work on infrared sensitive photo diodes exemplifies innovation in technology. His contributions continue to influence the industry and showcase the importance of research and development in advancing modern technology.