Geok Ing Ng

Title: Innovations of Geok Ing Ng in Semiconductor Technology

Introduction

Geok Ing Ng is a notable inventor based in Singapore, recognized for her contributions to semiconductor technology. With a focus on enhancing the performance of electronic devices, she has made significant strides in the field of heterojunction bipolar transistors (HBTs).

Latest Patents

Geok Ing Ng holds a patent for the "Fabrication of a heterojunction bipolar transistor with integrated MIM capacitor." This invention involves a semiconductor device that features an MIM capacitor positioned on the upper surface of a heterostructure. The design allows the capacitor and HBT to share a common structure, utilizing the same metal layers for both the HBT electrodes and the capacitor plates. The innovative approach ensures that the dielectric material can be deposited without damaging the HBT structure, enhancing the overall efficiency of the device.

Career Highlights

Geok Ing Ng is currently employed at Denselight Semiconductor Pte Ltd, where she continues to develop cutting-edge semiconductor solutions. Her work has been instrumental in advancing the capabilities of HBTs, which are crucial for various electronic applications.

Collaborations

Geok has collaborated with esteemed colleagues, including Hiroshi Nakamura and Ting Cheong Ang, to further her research and development efforts in semiconductor technology.

Conclusion

Geok Ing Ng's innovative work in semiconductor technology, particularly her patent on HBTs, showcases her significant contributions to the field. Her ongoing efforts at Denselight Semiconductor Pte Ltd continue to push the boundaries of electronic device performance.