This inventor holds 11 USPTO granted patents. Top assignees: Sharp Kabushiki Kaisha Corporation, University of Nottingham. Active years: 1995-2004.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Oxon, GB (1995)
- Oxfordshire, GB (1996 - 1998)
- Deddington, GB (1999 - 2004)
Company Filing History:


Years Active: 1995-2004
Title: Geoffrey Duggan: Innovator in III-Nitride Optoelectronic Devices
Introduction
Geoffrey Duggan is a prominent inventor based in Deddington, GB. He has made significant contributions to the field of optoelectronics, particularly in the development of III-Nitride semiconductor devices. With a total of 11 patents to his name, Duggan's work has advanced the efficiency and performance of light-emitting diodes and laser diodes.
Latest Patents
One of his latest patents involves a III-Nitride optoelectronic semiconductor device that contains lattice mismatched III-Nitride semiconductor materials. This innovative device features a sapphire substrate with a GaN buffer layer, an n-doped GaN contact layer, an n-doped (AlGa)N cladding layer, a Zn-doped (InGa)N active layer, a p-doped (AlGa)N cladding layer, and a p-doped GaN contact layer. The introduction of graded layers at the interfaces between the cladding layers and both the contact layers and the active layer helps to reduce strain and minimize dislocations, thereby increasing the device's operational efficiency. Another notable patent describes a molecular beam epitaxy method for growing a layer of Group III nitride material on a substrate. This method involves several steps, including the disposal of a substrate in a vacuum chamber and the supply of ammonia and a Group III element to facilitate the growth of the nitride layer.
Career Highlights
Throughout his career, Geoffrey Duggan has worked with notable organizations, including Sharp Kabushiki Kaisha Corporation and the University of Nottingham. His experience in these institutions has allowed him to refine his expertise in semiconductor technology and optoelectronic devices.
Collaborations
Duggan has collaborated with esteemed colleagues such as Martin David Dawson and Timothy David Bestwick. These partnerships have contributed to the advancement of research and innovation in the field of optoelectronics.
Conclusion
Geoffrey Duggan's contributions to III-Nitride optoelectronic devices have significantly impacted the industry. His innovative patents and collaborations highlight his dedication to advancing technology in this field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile