Company Filing History:
Years Active: 2004
Title: The Innovations of Geoffery Summers
Introduction
Geoffery Summers is an accomplished inventor based in Highland, MD (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of CMOS devices. His innovative work focuses on enhancing the resilience of these devices against total dose radiation effects.
Latest Patents
Geoffery Summers holds a patent for "CMOS devices hardened against total dose radiation effects." This invention involves a CMOS or NMOS device that incorporates one or more n-channel FETs on a substrate. The device is designed to resist total dose radiation failures by utilizing a negative voltage source. This source applies a steady negative back bias to the substrate of the n-channel FETs, effectively mitigating leakage currents and thereby reducing the impact of total dose radiation effects.
Career Highlights
Summers is currently associated with the United States Navy, where he contributes his expertise in semiconductor technology. His work has been instrumental in advancing the reliability of electronic devices used in radiation-prone environments. With a total of 1 patent, his innovations reflect a commitment to improving technology for critical applications.
Collaborations
Throughout his career, Geoffery has collaborated with notable colleagues, including Michael Xapsos and Eric M Jackson. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Geoffery Summers exemplifies the spirit of innovation in the field of semiconductor technology. His work on CMOS devices has paved the way for advancements that enhance device reliability in challenging environments. His contributions are a testament to the importance of research and development in the pursuit of technological excellence.