Yokohama, Japan

Gen Sasaki


Average Co-Inventor Count = 1.8

ph-index = 4

Forward Citations = 53(Granted Patents)


Company Filing History:


Years Active: 1983-1985

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4 patents (USPTO):Explore Patents

Title: Gen Sasaki: Innovator in Semiconductor Technology

Introduction

Gen Sasaki is a prominent inventor based in Yokohama, Japan, known for his contributions to semiconductor technology. With a total of 4 patents to his name, he has made significant advancements in methods for manufacturing semiconductor devices.

Latest Patents

Sasaki's latest patents include a "Method of selectively etching high impurity concentration semiconductor" and a "Method for manufacturing semiconductor device." The first patent discloses a technique for selectively etching a high impurity concentration semiconductor layer by utilizing a difference in impurity concentration. This method involves exposing the semiconductor layer to an aqueous solution of a hydrogen fluoride-nitric acid-acetic acid-based etching solution while applying ultrasonic vibration. The second patent outlines a comprehensive method for manufacturing a semiconductor device, which includes forming grooves in a semiconductor substrate, selectively depositing masking materials, and introducing impurities to create isolation regions with high precision.

Career Highlights

Throughout his career, Gen Sasaki has worked with notable companies such as Tokyo Shibaura Denki and Toshiba Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Sasaki has collaborated with esteemed colleagues, including Minoru Taguchi and Shuichi Kameyama, further enhancing his work in the field of semiconductor manufacturing.

Conclusion

Gen Sasaki's innovative methods and patents have significantly impacted the semiconductor industry. His work continues to influence advancements in technology and manufacturing processes.

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