The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 1985
Filed:
Sep. 02, 1983
Gen Sasaki, Yokohama, JP;
Abstract
A method for manufacturing a semiconductor device, comprising the steps of selectively oxidizing a surface of a semiconductor layer of a first conductivity type so as to form a field oxide film, selectively forming an impurity region of a second conductivity type in an element region isolated by the field oxide film, forming a polycrystalline silicon pattern containing an impurity of the first conductivity type on a surface including at least part of the impurity region and the field oxide film, and diffusing the impurity of the first conductivity type from the polycrystalline silicon pattern into the impurity region so as to form another impurity region of the first conductivity type contiguous with the field oxide film, wherein a thickness t of the field oxide film and a concentration n of the impurity of the first conductivity type in the polycrystalline silicon pattern have the following relation: