Shanghai, China

Ge Yang

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Shanghai Bright Power Semiconductor Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ge Yang. Retrieved from https://idiyas.com/inventor/ge-yang-rd1g72gb

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Ge Yang - Innovator in Power Semiconductor Technology

Introduction

Ge Yang is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of power semiconductor technology. His innovative work focuses on enhancing the stability and efficiency of power supply systems.

Latest Patents

Ge Yang holds a patent for a built-in ripple injection circuit and control chip. This invention provides a built-in ripple injection circuit and a control chip, where a divided feedback voltage is obtained by dividing an output voltage through a feedback circuit. High-frequency ripple in the output voltage is generated using an operational amplifier and a first capacitor. The high-frequency ripple is then injected at a third terminal of a source follower. This design results in a feedback voltage that is a superimposition of the divided feedback voltage and the high-frequency ripple. The innovation enhances the stability and interference resilience of power supply systems operating in a ripple-based COT control mode. Furthermore, the built-in ripple circuit can be integrated into the control chip, eliminating the need for a large capacitor and effectively addressing applications that require on-chip integration of the feedback circuit. This advancement reduces the overall cost of the power supply system.

Career Highlights

Ge Yang is currently employed at Shanghai Bright Power Semiconductor Co., Ltd. His work at this company has allowed him to further develop his expertise in semiconductor technology and contribute to cutting-edge innovations in the field.

Collaborations

Ge Yang has collaborated with notable coworkers, including Rulong Jiang and Zhen Zhu. Their combined efforts have fostered a productive environment for innovation and development within their organization.

Conclusion

Ge Yang's contributions to power semiconductor technology exemplify the impact of innovative thinking in enhancing system performance and cost efficiency. His patent for the built-in ripple injection circuit and control chip showcases his commitment to advancing technology in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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