Ge Gong

Title: Ge Gong: Innovator in High-Speed Integrated Circuits

Introduction

Ge Gong is a prominent inventor based in Santa Clara, CA (US). He has made significant contributions to the field of high-speed integrated circuits, particularly with his innovative approach to impedance bonding techniques. His work has implications for the performance and reliability of electronic devices operating at high frequencies.

Latest Patents

Ge Gong holds a patent for a matched impedance bonding technique in high-speed integrated circuits. This method supports integrated circuits operating at 10 GHz or higher switching speeds. The patented technology involves a semiconductor die with conventional bonding pads and a substrate, such as a printed circuit board, that has conductive traces. These traces couple input, output, or bi-directional signals between bonding finger areas and external terminals. A ground plate, electrically isolated from the conductive trace, is strategically positioned near the bonding finger area to enhance signal integrity by canceling the complex impedance of bond wires. Additionally, the use of multiple bond wires to connect the same bonding finger area reduces inductance, further improving performance.

Career Highlights

Ge Gong is currently employed at Bitblitz Communications, Inc., where he continues to develop innovative solutions in the field of integrated circuits. His expertise and contributions have positioned him as a valuable asset in the technology sector.

Collaborations

Ge Gong has collaborated with notable colleagues, including Nirmal K Sharma and Jason Andrew Chen. Their combined efforts have fostered advancements in high-speed circuit technologies.

Conclusion

Ge Gong's work in high-speed integrated circuits exemplifies the impact of innovative thinking in technology. His patented techniques are paving the way for enhanced performance in electronic devices.