Gaston Sifre

Title: Gaston Sifre: Innovator in Power Semiconductor Manufacturing

Introduction

Gaston Sifre is a notable inventor based in Orsay, France. He has made significant contributions to the field of power semiconductor manufacturing. His innovative approach has led to the development of a unique method that enhances the efficiency and effectiveness of semiconductor devices.

Latest Patents

Gaston Sifre holds a patent for a method of manufacturing power semiconductors with pressed contacts. This invention relates to a technique that utilizes an interdigitated structure. The process involves forming the thickest contact metal coverings by applying a metal layer through serigraphy on a first thin metal layer that is deposited by evaporation in a vacuum. This method represents a significant advancement in semiconductor technology.

Career Highlights

Gaston Sifre is associated with Alsthom Atlantique, a company known for its expertise in electrical engineering and technology. His work at the company has allowed him to focus on innovative solutions in the semiconductor industry. His contributions have been instrumental in advancing the capabilities of power semiconductor devices.

Collaborations

Gaston has collaborated with Bernard Bourdon, a fellow innovator in the field. Their partnership has fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Gaston Sifre's work in the field of power semiconductors exemplifies the spirit of innovation. His patented method showcases his commitment to advancing technology and improving manufacturing processes. His contributions continue to influence the semiconductor industry positively.